hesis subject: Sub Nanosecond Imaging of Operating Microelectronic Devices by X-ray Diffraction Microscopy

Beamline ID01, at the ESRF is a world leading instrument dedicated to micro- and nano-beam X-ray diffraction imaging experiments. It enables advanced studies of epitaxial materials and microelectronic devices, including time-resolved full-field diffraction microscopy. The ID01 team has successfully carried out several lighthouse experiments that attract collaborators and users worldwide.

The successful candidate will join the team and collaborate with a network of European semiconductor device research groups and technology organizations. These partners focus on applied materials and devices in the time domain. In particular, the project addresses key challenges limiting efficiency and life-time of microelectronic and optoelectronic devices based on SiGe(Sn) heterostructures, namely heat generation and strain-induced degradation during operation. The improvement of device design and fabrication requires an experimental technique capable of probing the spatial and temporal distribution of lattice strain under realistic operating conditions. This can be achieved usingX-ray Diffraction Microscopy in the unique set-up at ID01.. This project will provide fundamental understanding of thermomechanical behaviour and energy dissipation in technologically and economically relevant semiconductor devices. In addition, it will advance the X-ray diffraction microscopy methodology toward 3D spatial and temporal strain–temperature imaging for the optimization of next-generation electronic and optoelectronic devices.